The conference focuses on all aspects of defects in semiconductors including point, line, planar and volume defects studied by a variety of tools. Most recent advances in the field of defect analysis will be discussed. This comprehensive approach has allowed for a discussion of the multifaceted effects of growth, processing, device fabrication as well as their interrelationships, and how to approach the study of defects.
The conference provides an outstanding international forum to present and discuss the correlation between crystal defects, device fabrication and degradation.
The conference is organized by Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik and Leibniz Institute for Crystal Growth.
Conference Dinner: 11. September with a Berlin Sightseeing Tour "City of Change" in advance.
Dr. Anna Mogilatenko
Ferdinand-Braun-Institut Leibniz-Institut für Höchstfrequenztechnik